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Semiconductor Components Industries, LLC, 2010
September, 2010 ?
Rev. 2
1
Publication Order Number:
NSR02F30/D
NSR02F30NXT5G
Schottky Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current. The DSN2 (Dual Silicon
No?lead) package is a chip level package using solderable metal
contacts under the package similar to DFN style packages. The DSN
style package enables 100% utilization of the package area for active
silicon, offering a significant performance per board area advantage
compared to products in plastic molded packages. The low thermal
resistance enables designers to meet the challenging task of achieving
higher efficiency and meeting reduced space requirements.
Features
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Very Low Forward Voltage Drop ?
370 mV @ 10 mA
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Low Reverse Current ?
7.0
A @ 10 V VR
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200 mA of Continuous Forward Current
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ESD Rating ?
Human Body Model: Class 3B
ESD Rating
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Machine Model: Class C
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Very High Switching Speed
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Low Capacitance ?
CT = 7 pF
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This is a Halide?Free Device
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This is a Pb?Free Device
Typical Applications
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LCD and Keypad Backlighting
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Camera Photo Flash
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Buck and Boost dc?dc Converters
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Reverse Voltage and Current Protection
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Clamping & Protection
Markets
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Mobile Handsets
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MP3 Players
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Digital Camera and Camcorders
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Notebook PCs & PDAs
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GPS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
V
Forward Current (DC)
IF
200
mA
Forward Surge Current
(60 Hz @ 1 cycle)
IFSM
4.0
A
ESD Rating: Human Body Model
Machine Model
ESD
>8.0
>400
kV
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
30 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
http://onsemi.com
Device Package Shipping?
ORDERING INFORMATION
NSR02F30NXT5G DSN2
(Pb?Free)
5000 / Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DSN2
(0201)
CASE 152AA
MARKING
DIAGRAM
PIN 1
V230 = Specific Device Code
YYY = Year Code
V230
YYY
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相关代理商/技术参数
NSR02F30NXT5G_10 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Schottky Barrier Diode
NSR02L30NXT5G 功能描述:肖特基二极管与整流器 204 FC SCHOTTKY DIODES RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
NSR02L30NXT5G_10 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Schottky Barrier Diode
NSR0320MW2T1 功能描述:肖特基二极管与整流器 20V 200mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
NSR0320MW2T1/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:NSR0320MW2T1 Data Sheet SOD323
NSR0320MW2T1_10 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Schottky Barrier Diodes
NSR0320MW2T1G 功能描述:肖特基二极管与整流器 20V 200mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
NSR0320MW2T1H 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: